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TYPICAL PERFORMANCE CURVES (R)
APT65GP60JDQ2 600V
APT65GP60JDQ2
POWER MOS 7 IGBT
(R)
E G C
E
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff * 100 kHz operation @ 400V, 33A * 50 kHz operation @ 400V, 47A * SSOA Rated
S
OT
22
7
ISOTOP (R)
"UL Recognized"
file # E145592
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT65GP60JDQ2 UNIT Volts
600 30 130 60 250 250A @ 600V 431 -55 to 150 300
Amps
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1000A) Gate Threshold Voltage (VCE = VGE, I C = 2.5mA, Tj = 25C) MIN TYP MAX Units
600 3 4.5 2.2 2.1 1250
A nA
6-2005 050-7453 Rev A
6 2.7
Collector-Emitter On Voltage (VGE = 15V, I C = 65A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 65A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2 2
Volts
I CES I GES
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
5500
100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT65GP60JDQ2
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 65A TJ = 150C, R G = 5, VGE = VGE = 15V MIN TYP MAX UNIT pF V nC
7400 580 35 7.5 210 50 65 250 30 55 90 65 605 1410 895 30 55 130 90 605 1925 1470 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V I C = 65A RG = 5
Turn-on Switching Energy (Diode)
6
TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V I C = 65A RG = 5
J
Turn-on Switching Energy (Diode)
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT VIsolation Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 MIN TYP MAX UNIT C/W gm Volts
.29 1.21 29.2
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7453
Rev A
6-2005
TYPICAL PERFORMANCE CURVES
100 90
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
100 90 80 70 60 50 40 30 20 10 0
TJ = -55C TJ = 25C TJ = 125C
APT65GP60JDQ2
80 70 60 50 40 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
TJ = -55C
TJ = 25C TJ = 125C
250
IC, COLLECTOR CURRENT (A)
FIGURE 1, Output Characteristics(TJ = 25C)
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 125C)
I = 65A C T = 25C
J
0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
14 12 10 8 6 4 2 0 0
200
VCE = 120V VCE = 300V
150
TJ = -55C
100
TJ = 25C
VCE = 480V
50
TJ = 125C
0
0
23 456 78 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
1
50
100 150 200 GATE CHARGE (nC)
250
FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 IC = 130A
3.0 2.5 2.0 1.5 1.0 0.5 IC = 32.5A IC = 130A IC = 65A
IC = 65A IC = 32.5A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10
0
6
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 180
0 -50
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
160 140 120 100 80
6-2005 050-7453 Rev A
1.05
1.00
60 40 20 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50
0.95
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0.90 -50
35
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
160 140 120 100 80 60 40
V = 400V 20 RCE= 5 G VGE =15V,TJ=25C VGE =15V,TJ=125C
APT65GP60JDQ2
30 25 20 15 10 5 0
VCE = 400V TJ = 25C, TJ =125C RG = 5 L = 100 H
VGE = 15V
25 45 65 85 105 125 145 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
140 120 100 80 60 40 20 0
TJ = 25 or 125C,VGE = 15V RG = 5, L = 100H, VCE = 400V
5
25 45 65 85 105 125 145 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
140 120
TJ = 125C, VGE = 15V
0
L = 100 H
5
RG = 5, L = 100H, VCE = 400V
tf, FALL TIME (ns)
tr, RISE TIME (ns)
100 80 60 40 20 0
TJ = 25C, VGE = 15V
5 25 45 65 85 105 125 145 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
6000
EON2, TURN ON ENERGY LOSS (J) EOFF, TURN OFF ENERGY LOSS (J)
= 400V V CE = +15V V GE R = 5
G
5 25 45 65 85 105 125 145 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
5000
= 400V V CE = +15V V GE R = 5
G
5000 4000 3000 2000 1000
TJ = 125C,VGE =15V
4000
TJ = 125C, VGE = 15V
3000
2000
1000
TJ = 25C,VGE =15V
TJ = 25C, VGE = 15V
10 25 45 65 85 105 125 145 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
10000
SWITCHING ENERGY LOSSES (J)
= 400V V CE = +15V V GE T = 125C
J
0
5 25 45 65 85 105 145 165 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
6000
Eon2,130A
V = 400V CE V = +15V GE R = 5
G
0
Eon2,130A
SWITCHING ENERGY LOSSES (J)
8000
5000 4000 3000 2000 1000 0
Eoff,130A
6000
4000
Eoff,130A Eon2,65A
6-2005
Eon2,65A Eoff,65A Eon2,32.5A Eoff,32.5A
2000
Eoff,65A Eoff,32.5A
Rev A
Eon2,32.5A
050-7453
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
10,000 5000 Cies IC, COLLECTOR CURRENT (A)
300 250 200 150 100 50 0
APT65GP60JDQ2
C, CAPACITANCE ( F)
1,000 500 C0es
P
100 50 Cres
10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0.30 0.9 ZJC, THERMAL IMPEDANCE (C/W) 0.25 0.20 0.15 0.10 0.05 0 0.7
0.5
Note:
PDM
0.3
t1 t2
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
190 FMAX, OPERATING FREQUENCY (kHz) 100 50
Junction temp. (C)
RC MODEL
0.0697
0.0175
F
10 5
T = 125C J T = 75C C D = 50 % V = 400V CE R = 5
G
Power (watts)
0.136
0.227
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
0.0833 Case temperature. (C)
1.08
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
30 45 60 75 90 105 120 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
15
050-7453
Rev A
6-2005
APT65GP60JDQ2
APT30DQ60
10%
Gate Voltage TJ = 125 C
td(on) tr 90%
Collector Current
V CC
IC
V CE
A D.U.T.
5%
10%
5%
Collector Voltage
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
65GP60B2 @ 125C Eoff
VTEST
90% Gate Voltage Collector Voltage
*DRIVER SAME TYPE AS D.U.T.
TJ = 125 C
A V CE 100uH IC V CLAMP A DRIVER* D.U.T. B
td(off)
90%
tf
0 10% Switching Energy Collector Current
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
050-7453
Rev A
6-2005
TYPICAL PERFORMANCE CURVES
APT65GP60JDQ2
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 99C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 65A Forward Voltage IF = 130A IF = 65A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT65GP60JDQ2 UNIT Amps
30 42 320
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.3 2.9 1.4
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.40 ZJC, THERMAL IMPEDANCE (C/W) 1.20 1.00 0.80 0.60 0.40 0.20 0 0.7 0.5 0.3 0.1 0.05 10
-5
21 105 115 3 125 465 7 60 830 23 -
IF = 30A, diF/dt = -200A/s VR = 400V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 30A, diF/dt = -200A/s VR = 400V, TC = 125C
IF = 30A, diF/dt = -1000A/s VR = 400V, TC = 125C
0.9
Note:
PDM
t1 t2
SINGLE PULSE 10
-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp (C) 0.320 C/W 0.00278 J/C
Power (watts)
0.515 C/W
0.0421 J/C
0.375 C/W Case temperature (C)
0.242 J/C
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
050-7453
Rev A
6-2005
140 120 IF, FORWARD CURRENT (A) 100 80 60 40 20 0 0 TJ = 125C TJ = -55C TJ = 25C trr, REVERSE RECOVERY TIME (ns)
200 60A 150
APT65GP60JDQ2
T = 125C J V = 400V
R
TJ = 175C
100
30A 15A
50
0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 26. Forward Current vs. Forward Voltage 1400 Qrr, REVERSE RECOVERY CHARGE (nC) 1200 1000 800 600 400 15A 200 0
T = 125C J V = 400V
R
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 27. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 35 30 25 20 15 10 5 0
T = 125C J V = 400V
R
0
60A
60A
30A
30A
15A
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 0.8 0.6 0.4
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 29. Reverse Recovery Current vs. Current Rate of Change 50 45 40
Duty cycle = 0.5 T = 175C
J
trr IRRM
Qrr
35 IF(AV) (A) 30 25 20
trr
Qrr
0.2 0.0
15 10 5
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 30. Dynamic Parameters vs. Junction Temperature
200 CJ, JUNCTION CAPACITANCE (pF)
0
75 100 125 150 175 Case Temperature (C) Figure 31. Maximum Average Forward Current vs. CaseTemperature
0
25
50
150
100
6-2005
50
Rev A
050-7453
10 100 200 VR, REVERSE VOLTAGE (V) Figure 32. Junction Capacitance vs. Reverse Voltage
0
1
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT6017LLL
APT65GP60JDQ2
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 33. Diode Test Circui t
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 34, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
* Emitter/Anode Dimensions in Millimeters and (Inches)
Gate
ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7453
Rev A
6-2005
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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